- Manufacturer:
- Toshiba
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- Through Hole
- Package / Case:
- TO-220-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 600 V
- Id - Continuous Drain Current:
- 20 A
- Rds On - Drain-Source Resistance:
- 130 mOhms
- Vgs - Gate-Source Voltage:
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage:
- 3.7 V
- Qg - Gate Charge:
- 48 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 165 W
- Channel Mode:
- Enhancement
- Tradename:
- DTMOSIV
- Packaging:
- Tube
- Brand:
- Toshiba
- Configuration:
- Single
- Fall Time:
- 6 ns
- Height:
- 15.1 mm
- Length:
- 10.16 mm
- Product Type:
- MOSFET
- Rise Time:
- 25 ns
- Series:
- TK20E60W
- Factory Pack Quantity:
- 50
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Typical Turn-Off Delay Time:
- 100 ns
- Typical Turn-On Delay Time:
- 50 ns
- Width:
- 4.45 mm
- Unit Weight:
- 0.068784 oz
