- Part Number
- TK31N60X,S1F
- Manufacturer
- Toshiba Semiconductor and Storage
- Description
- MOSFET N-CH 600V 30.8A TO-247
- Package
- TO-247-3
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- Current - Continuous Drain (Id) @ 25°C
- 30.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs
- 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 3000pF @ 300V
- Vgs (Max)
- ±30V
- FET Feature
- Super Junction
- Power Dissipation (Max)
- 230W (Tc)
- Rds On (Max) @ Id, Vgs
- 88 mOhm @ 9.4A, 10V
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247
- Package / Case
