- Part Number
- TK32A12N1,S4X
- Manufacturer
- Toshiba Semiconductor and Storage
- Description
- MOSFET N-CH 120V 32A TO-220
- Package
- TO-220-3 Full Pack, Isolated Tab
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 120V
- Current - Continuous Drain (Id) @ 25°C
- 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs
- 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 2000pF @ 60V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 30W (Tc)
- Rds On (Max) @ Id, Vgs
- 13.8 mOhm @ 16A, 10V
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220SIS
- Package / Case
