- Part Number
- TP0610K-T1-GE3
- Manufacturer
- Vishay Siliconix
- Description
- MOSFET P-CH 60V 185MA TO-236
- Package
- TO-236-3, SC-59, SOT-23-3
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 185mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 1.7nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds
- 23pF @ 25V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 350mW (Ta)
- Rds On (Max) @ Id, Vgs
- 6 Ohm @ 500mA, 10V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- SOT-23-3 (TO-236)
- Package / Case