- Manufacturer:
- Taiwan Semiconductor
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- Through Hole
- Package / Case:
- TO-220-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 500 V
- Id - Continuous Drain Current:
- 13 A
- Rds On - Drain-Source Resistance:
- 380 mOhms
- Vgs th - Gate-Source Threshold Voltage:
- 2 V
- Qg - Gate Charge:
- 36 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Channel Mode:
- Enhancement
- Brand:
- Taiwan Semiconductor
- Configuration:
- Single
- Fall Time:
- 59 ns
- Forward Transconductance - Min:
- 14 S
- Product Type:
- MOSFET
- Rise Time:
- 45 ns
- Series:
- TSM
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Type:
- N-Channel
- Typical Turn-Off Delay Time:
- 156 ns
- Typical Turn-On Delay Time:
- 53 ns
- Unit Weight:
- 0.068784 oz
