- Manufacturer:
- ROHM Semiconductor
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- TSST-8
- Transistor Polarity:
- N-Channel, P-Channel
- Number of Channels:
- 2 Channel
- Vds - Drain-Source Breakdown Voltage:
- 30 V, 20 V
- Id - Continuous Drain Current:
- 2.5 A
- Rds On - Drain-Source Resistance:
- 90 mOhms, 68 mOhms
- Vgs - Gate-Source Voltage:
- - 12 V, + 12 V, - 10 V, + 10 V
- Vgs th - Gate-Source Threshold Voltage:
- 1.5 V, 1 V
- Qg - Gate Charge:
- 3.2 nC, 12 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 1.25 W
- Channel Mode:
- Enhancement
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Brand:
- ROHM Semiconductor
- Configuration:
- Dual
- Fall Time:
- 20 ns, 85 ns
- Product Type:
- MOSFET
- Rise Time:
- 30 ns, 30 ns
- Factory Pack Quantity:
- 3000
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel, 1 P-Channel
- Typical Turn-Off Delay Time:
- 20 ns, 120 ns
- Typical Turn-On Delay Time:
- 7 ns, 9 ns
- Part # Aliases:
- TT8M2
- Unit Weight:
- 0.001981 oz
