US6T4TR

Manufacturer:

onsemi

Product Category:

Bipolar Transistors - BJT

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

12 V

Collector- Base Voltage VCBO:

15 V

Emitter- Base Voltage VEBO:

6 V

Maximum DC Collector Current:

3 A

Pd - Power Dissipation:

1 W

Gain Bandwidth Product fT:

280 MHz

Maximum Operating Temperature:

+ 150 C

Brand:

onsemi / Fairchild

DC Collector/Base Gain hfe Min:

270 at 500 mA, 2 V

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si