- Manufacturer:
- Diodes Incorporated
- Product Category:
- Bipolar Transistors - BJT
- Mounting Style:
- Through Hole
- Package / Case:
- TO-92-3
- Transistor Polarity:
- NPN
- Configuration:
- Single
- Collector- Emitter Voltage VCEO Max:
- 400 V
- Collector- Base Voltage VCBO:
- 400 V
- Emitter- Base Voltage VEBO:
- 5 V
- Collector-Emitter Saturation Voltage:
- 500 mV
- Maximum DC Collector Current:
- 500 mA
- Pd - Power Dissipation:
- 1 W
- Gain Bandwidth Product fT:
- 50 MHz
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Series:
- ZTX658
- Packaging:
- Ammo Pack
- Brand:
- Diodes Incorporated
- Continuous Collector Current:
- 0.5 A
- DC Current Gain hFE Max:
- 50 at 1 mA, 5 V
- Height:
- 4.01 mm
- Length:
- 4.77 mm
- Product Type:
- BJTs - Bipolar Transistors
- Factory Pack Quantity:
- 2000
- Subcategory:
- Transistors
- Technology:
- Si
- Width:
- 2.41 mm
- Unit Weight:
- 0.016000 oz
