- Manufacturer:
- Diodes Incorporated
- Product Category:
- Bipolar Transistors - BJT
- Mounting Style:
- Through Hole
- Package / Case:
- TO-92-3
- Transistor Polarity:
- PNP
- Configuration:
- Single
- Collector- Emitter Voltage VCEO Max:
- 15 V
- Collector- Base Voltage VCBO:
- 15 V
- Emitter- Base Voltage VEBO:
- 5 V
- Maximum DC Collector Current:
- 3 A
- Pd - Power Dissipation:
- 1 W
- Gain Bandwidth Product fT:
- 100 MHz
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Series:
- ZTX788
- Packaging:
- Ammo Pack
- Brand:
- Diodes Incorporated
- DC Collector/Base Gain hfe Min:
- 500 at 10 mA, 2 V, 400 at 1 A, 2 V, 300 at 2 A, 2 V, 150 at 6 A, 2 V
- DC Current Gain hFE Max:
- 500 at 10 mA, 2 V
- Height:
- 4.01 mm
- Length:
- 4.77 mm
- Product Type:
- BJTs - Bipolar Transistors
- Factory Pack Quantity:
- 2000
- Subcategory:
- Transistors
- Technology:
- Si
- Width:
- 2.41 mm