- Manufacturer:
- Diodes Incorporated
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- Through Hole
- Package / Case:
- TO-92-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 100 V
- Id - Continuous Drain Current:
- 320 mA
- Rds On - Drain-Source Resistance:
- 4 Ohms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:
- 800 mV
- Qg - Gate Charge:
- -
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 700 mW
- Channel Mode:
- Enhancement
- Packaging:
- Bulk
- Brand:
- Diodes Incorporated
- Configuration:
- Single
- Fall Time:
- 13 ns
- Forward Transconductance - Min:
- 250 mS
- Height:
- 4.01 mm
- Length:
- 4.77 mm
- Product:
- MOSFET Small Signal
- Product Type:
- MOSFET
- Rise Time:
- 8 ns
- Series:
- ZVN2110
- Factory Pack Quantity:
- 4000
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel
- Type:
- FET
- Typical Turn-Off Delay Time:
- 13 ns
- Typical Turn-On Delay Time:
- 7 ns
- Width:
- 2.41 mm
- Unit Weight:
- 0.016000 oz
