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A2G26H281-04SR3

RF JFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V

Manufacturer:
NXP Semiconductors
Package:
Packing:
Reel
Datasheet:
A2G26H281-04SR3
Delivery services:
Payment method:
In stock:
3303
Order quantity:

Specifications

Manufacturer:
NXP
Product Category:
RF JFET Transistors
Technology:
GaN
Operating Frequency:
2496 MHz to 2690 MHz
Gain:
14.2 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
125 V
Vgs - Gate-Source Breakdown Voltage:
- 8 V, 0 V
Output Power:
50 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
NI-780S-4
Packaging:
Reel
Brand:
NXP Semiconductors
Configuration:
Dual
Product Type:
RF JFET Transistors
Factory Pack Quantity:
250
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 2.3 V
Part # Aliases:
935332873128
Unit Weight:
0.164077 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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