- Manufacturer:
- NXP
- Product Category:
- RF MOSFET Transistors
- Transistor Polarity:
- Dual N-Channel
- Technology:
- GaN-on-Si
- Id - Continuous Drain Current:
- 8.04 mA
- Vds - Drain-Source Breakdown Voltage:
- 125 V
- Operating Frequency:
- 3400 MHz to 3600 MHz
- Gain:
- 14 dB
- Output Power:
- 14 W
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Mounting Style:
- SMD/SMT
- Package / Case:
- NI-780S-4L
- Packaging:
- Reel
- Brand:
- NXP Semiconductors
- Number of Channels:
- 2 Channel
- Product Type:
- RF MOSFET Transistors
- Factory Pack Quantity:
- 250
- Subcategory:
- MOSFETs
- Type:
- RF Power MOSFET
- Vgs - Gate-Source Voltage:
- - 8 V
- Vgs th - Gate-Source Threshold Voltage:
- - 2.3 V
- Part # Aliases:
- 935368927128
- Unit Weight:
- 0.000931 oz
