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A3T19H455W23SR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V

Manufacturer:
NXP Semiconductors
Package:
Packing:
Reel
Datasheet:
A3T19H455W23SR6
Delivery services:
Payment method:
In stock:
2802
Order quantity:

Specifications

Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
Transistor Polarity:
Dual N-Channel
Technology:
Si
Id - Continuous Drain Current:
3.6 A
Vds - Drain-Source Breakdown Voltage:
- 500 mV, 65 V
Operating Frequency:
1930 MHz to 1990 MHz
Gain:
16.4 dB
Output Power:
81 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
ACP-1230S-4L2S
Packaging:
Reel
Brand:
NXP Semiconductors
Number of Channels:
2 Channel
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
150
Subcategory:
MOSFETs
Type:
RF Power MOSFET
Vgs - Gate-Source Voltage:
- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage:
1.4 V
Part # Aliases:
935363503128
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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