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A5G35S004NT6

RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300 4300 MHz, 24.5 dBm Avg., 48 V

Manufacturer:
NXP Semiconductors
Package:
Packing:
Reel, Cut Tape
Datasheet:
A5G35S004NT6
Delivery services:
Payment method:
In stock:
40
Order quantity:

Specifications

Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
Transistor Polarity:
N-Channel
Technology:
GaN Si
Id - Continuous Drain Current:
12 mA
Vds - Drain-Source Breakdown Voltage:
125 V
Operating Frequency:
3300 MHz to 4300 MHz
Gain:
16.9 dB
Output Power:
24.5 dBm
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
DFN-6
Packaging:
Reel
Packaging:
Cut Tape
Brand:
NXP Semiconductors
Number of Channels:
1 Channel
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Type:
RF Power MOSFET
Vgs - Gate-Source Voltage:
- 8 V
Vgs th - Gate-Source Threshold Voltage:
- 4.9 V
Part # Aliases:
935417637528
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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