- Manufacturer:
- NXP
- Product Category:
- RF MOSFET Transistors
- Shipping Restrictions:
- This product may require additional documentation to export from the United States.
- Transistor Polarity:
- Dual N-Channel
- Technology:
- GaN Si
- Id - Continuous Drain Current:
- 8.7 mA
- Vds - Drain-Source Breakdown Voltage:
- 125 V
- Operating Frequency:
- 3600 MHz to 3800 MHz
- Gain:
- 15.1 dB
- Output Power:
- 13.5 W
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Mounting Style:
- SMD/SMT
- Package / Case:
- DFN-6
- Packaging:
- Reel
- Brand:
- NXP Semiconductors
- Number of Channels:
- 2 Channel
- Product Type:
- RF MOSFET Transistors
- Factory Pack Quantity:
- 2500
- Subcategory:
- MOSFETs
- Type:
- RF Power MOSFET
- Vgs - Gate-Source Voltage:
- - 8 V
- Vgs th - Gate-Source Threshold Voltage:
- - 4.6 V
- Part # Aliases:
- 935432674528
