- Manufacturer:
- ROHM Semiconductor
- Product Category:
- Discrete Semiconductor Modules
- Product:
- Power MOSFET Modules
- Type:
- SiC Power Module
- Technology:
- SiC
- Vf - Forward Voltage:
- 1.6 V
- Vr - Reverse Voltage:
- 1200 V
- Vgs - Gate-Source Voltage:
- - 6 V, + 22 V
- Mounting Style:
- Screw Mounts
- Minimum Operating Temperature:
- - 40 C
- Maximum Operating Temperature:
- + 150 C
- Packaging:
- Bulk
- Brand:
- ROHM Semiconductor
- Configuration:
- Half-Bridge
- Fall Time:
- 50 ns
- Id - Continuous Drain Current:
- 300 A
- Pd - Power Dissipation:
- 1260 W
- Product Type:
- Discrete Semiconductor Modules
- Rise Time:
- 35 ns
- Factory Pack Quantity:
- 4
- Subcategory:
- Discrete Semiconductor Modules
- Transistor Polarity:
- N-Channel
- Typical Turn-Off Delay Time:
- 210 ns
- Typical Turn-On Delay Time:
- 30 ns
- Vds - Drain-Source Breakdown Voltage:
- 1200 V
- Vgs th - Gate-Source Threshold Voltage:
- 2.7 V
