- Manufacturer:
- Wolfspeed
- Product Category:
- RF JFET Transistors
- Transistor Type:
- HEMT
- Technology:
- GaN
- Operating Frequency:
- 4 GHz to 6 GHz
- Gain:
- 15 dB
- Transistor Polarity:
- N-Channel
- Vds - Drain-Source Breakdown Voltage:
- 120 V
- Vgs - Gate-Source Breakdown Voltage:
- - 10 V to 2 V
- Id - Continuous Drain Current:
- 3 A
- Output Power:
- 30 W
- Maximum Drain Gate Voltage:
- -
- Pd - Power Dissipation:
- -
- Mounting Style:
- SMD/SMT
- Package / Case:
- Die
- Packaging:
- Gel Pack
- Application:
- -
- Brand:
- Wolfspeed
- Class:
- -
- Configuration:
- Dual
- Development Kit:
- -
- Fall Time:
- -
- Gate-Source Cutoff Voltage:
- -
- Height:
- 100 um
- Length:
- 1.66 mm
- NF - Noise Figure:
- -
- Number of Channels:
- 2 Channel
- Operating Temperature Range:
- -
- P1dB - Compression Point:
- -
- Product:
- GaN HEMT
- Product Type:
- RF JFET Transistors
- Rds On - Drain-Source Resistance:
- 500 mOhms
- Rise Time:
- -
- Factory Pack Quantity:
- 10
- Subcategory:
- Transistors
- Typical Turn-Off Delay Time:
- -
- Vgs th - Gate-Source Threshold Voltage:
- - 3 V
- Width:
- 920 um
- Unit Weight:
- 0.258417 oz
