- Manufacturer:
- Wolfspeed
- Product Category:
- RF JFET Transistors
- Shipping Restrictions:
- This product may require additional documentation to export from the United States.
- Transistor Type:
- HEMT
- Technology:
- GaN-on-SiC
- Operating Frequency:
- 15 GHz
- Gain:
- 11 dB
- Transistor Polarity:
- N-Channel
- Vds - Drain-Source Breakdown Voltage:
- 100 V
- Vgs - Gate-Source Breakdown Voltage:
- - 10 V to 2 V
- Id - Continuous Drain Current:
- 2 A
- Output Power:
- 25 W
- Maximum Drain Gate Voltage:
- -
- Minimum Operating Temperature:
- - 40 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- -
- Mounting Style:
- SMD/SMT
- Package / Case:
- DFN-12
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Application:
- -
- Brand:
- Wolfspeed
- Class:
- -
- Configuration:
- Single
- Development Kit:
- CGHV1F025S-TB
- Fall Time:
- -
- Forward Transconductance - Min:
- -
- Gate-Source Cutoff Voltage:
- -
- Height:
- 0.9 mm
- Length:
- 4 mm
- Moisture Sensitive:
- Yes
- NF - Noise Figure:
- -
- Operating Temperature Range:
- - 40 C to + 150 C
- P1dB - Compression Point:
- -
- Product:
- GaN HEMT
- Product Type:
- RF JFET Transistors
- Rds On - Drain-Source Resistance:
- -
- Rise Time:
- -
- Factory Pack Quantity:
- 250
- Subcategory:
- Transistors
- Type:
- GaN SiC HEMT
- Typical Turn-Off Delay Time:
- -
- Vgs th - Gate-Source Threshold Voltage:
- - 3 V
- Width:
- 3 mm
- Unit Weight:
- 0.133060 oz
