- Manufacturer:
- Infineon
- Product Category:
- IGBT Modules
- Product:
- IGBT Silicon Modules
- Configuration:
- Half Bridge
- Collector- Emitter Voltage VCEO Max:
- 750 V
- Collector-Emitter Saturation Voltage:
- 1.55 V
- Continuous Collector Current at 25 C:
- 300 A
- Gate-Emitter Leakage Current:
- 400 nA
- Pd - Power Dissipation:
- 1667 W
- Minimum Operating Temperature:
- - 40 C
- Maximum Operating Temperature:
- + 150 C
- Packaging:
- Tube
- Brand:
- Infineon Technologies
- Product Type:
- IGBT Modules
- Series:
- IGBT EDT2
- Factory Pack Quantity:
- 240
- Subcategory:
- IGBTs
- Part # Aliases:
- FF450R08A03P2 SP001630036
