- Manufacturer:
- Infineon
- Product Category:
- IGBT Modules
- Product:
- IGBT Silicon Modules
- Configuration:
- Dual
- Collector- Emitter Voltage VCEO Max:
- 1200 V
- Collector-Emitter Saturation Voltage:
- 1.5 V
- Continuous Collector Current at 25 C:
- 890 A
- Gate-Emitter Leakage Current:
- 100 nA
- Pd - Power Dissipation:
- -
- Minimum Operating Temperature:
- - 40 C
- Maximum Operating Temperature:
- + 175 C
- Packaging:
- Tray
- Brand:
- Infineon Technologies
- Product Type:
- IGBT Modules
- Factory Pack Quantity:
- 6
- Subcategory:
- IGBTs
- Part # Aliases:
- FF900R12ME7W_B11 SP005589481
