IMZA120R020M1HXKSA1

Manufacturer:

Infineon

Product Category:

MOSFET

Technology:

SiC

Mounting Style:

Through Hole

Transistor Polarity:

N-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

1.2 kV

Id - Continuous Drain Current:

98 A

Rds On - Drain-Source Resistance:

19 mOhms

Vgs - Gate-Source Voltage:

- 10 V, + 23 V

Vgs th - Gate-Source Threshold Voltage:

4.2 V

Qg - Gate Charge:

83 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

375 W

Channel Mode:

Enhancement

Packaging:

Tube

Brand:

Infineon Technologies

Product:

MOSFET

Product Type:

MOSFET

Factory Pack Quantity:

240

Subcategory:

MOSFETs

Part # Aliases:

IMZA120R020M1H SP005448293