- Manufacturer:
- Infineon
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Transistor Polarity:
- P-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 100 V
- Id - Continuous Drain Current:
- 22 A
- Rds On - Drain-Source Resistance:
- 111 mOhms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:
- 4 V
- Qg - Gate Charge:
- 59 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 175 C
- Pd - Power Dissipation:
- 125 W
- Channel Mode:
- Enhancement
- Series:
- IPD11DP10
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Brand:
- Infineon Technologies
- Product:
- MOSFET
- Product Type:
- MOSFET
- Factory Pack Quantity:
- 2500
- Subcategory:
- MOSFETs
- Part # Aliases:
- IPD11DP10NM SP001656992
