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Home>Products>Memory ICs>F-RAM>MB85RS4MLYPF-G-BCERE1
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MB85RS4MLYPF-G-BCERE1

F-RAM 4Mbit FRAM, SPI, 1.7 1.95V - SOP8 T&R (125?)

Manufacturer:
Fujitsu Semiconductor
Package:
SOIC-8
Packing:
Reel
Datasheet:
MB85RS4MLYPF-G-BCERE1
Delivery services:
Payment method:
In stock:
3672
Order quantity:

Specifications

Part Number
MB85RS4MLYPF-G-BCERE1
Manufacturer
Fujitsu Semiconductor
Package
Tape&Reel
Memory Type
Non-Volatile
Memory Format
FRAM
Technology
FRAM (Ferroelectric RAM)
Memory Size
4Mbit
Memory Organization
512K x 8
Memory Interface
SPI
Clock Frequency
50 MHz
Voltage - Supply
1.7V ~ 1.95V
Operating Temperature
-40°C ~ 125°C
Package / Case
8-SOIC
Supplier Device Package
8-SOP

Description

The part number "MB85RS4MLYPF-G-BCERE1" corresponds to a specific type of FRAM (Ferroelectric Random Access Memory) integrated circuit manufactured by Fujitsu Semiconductor (now part of Cypress Semiconductor). Here is a breakdown of the part number:


MB85RS4MLYPF-G-BCERE1


MB85 - Series: This indicates it belongs to the MB85 series of FRAM ICs.

RS4M - Density: 4 Megabits (4 Mb)

L - Interface: SPI (Serial Peripheral Interface)

Y - Package: SOP (Small Outline Package)

P - Operating Voltage: 2.7V to 3.6V

F - Frequency: 20 MHz (maximum clock frequency)

G - Temperature Range: -40°C to +85°C

BCERE1 - Additional Code (specific product code)


Specifications:

- Density: 4 Megabits (512K words x 8 bits)

- Interface: SPI (Serial Peripheral Interface)

- Operating Voltage: 2.7V to 3.6V

- Maximum Clock Frequency: 20 MHz

- Temperature Range: -40°C to +85°C

- Package: SOP (Small Outline Package)


FRAM is a type of non-volatile memory that combines the benefits of both RAM (Random Access Memory) and EEPROM (Electrically Erasable Programmable Read-Only Memory). It offers fast write and read access with low power consumption and high endurance. The MB85RS4MLYPF-G-BCERE1 is commonly used in applications where frequent and fast data writes are required, such as industrial control systems, smart meters, and data loggers.

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