- Manufacturer:
- NXP
- Product Category:
- RF MOSFET Transistors
- Transistor Polarity:
- N-Channel
- Technology:
- Si
- Id - Continuous Drain Current:
- 2.6 A
- Vds - Drain-Source Breakdown Voltage:
- - 500 mV, 112 V
- Operating Frequency:
- 900 MHz to 1.215 GHz
- Gain:
- 19.6 dB
- Output Power:
- 1 kW
- Minimum Operating Temperature:
- - 40 C
- Maximum Operating Temperature:
- + 150 C
- Mounting Style:
- SMD/SMT
- Package / Case:
- NI-1230H-4S-4
- Packaging:
- Reel
- Brand:
- NXP Semiconductors
- Number of Channels:
- 2 Channel
- Pd - Power Dissipation:
- 1.053 kW
- Product Type:
- RF MOSFET Transistors
- Factory Pack Quantity:
- 50
- Subcategory:
- MOSFETs
- Type:
- RF Power MOSFET
- Vgs - Gate-Source Voltage:
- - 6 V, 10 V
- Vgs th - Gate-Source Threshold Voltage:
- 1.8 V
- Part # Aliases:
- 935316216178
- Unit Weight:
- 0.465355 oz
