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MRF101BN

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

Manufacturer:
NXP Semiconductors
Package:
Packing:
Tube
Datasheet:
MRF101BN
Delivery services:
Payment method:
In stock:
235
Order quantity:

Specifications

製造商:
NXP
產品類型:
RF MOSFET晶體管
晶體管極性:
N-Channel
技術:
Si
Id - C連續漏極電流:
8.8 A
Vds - 漏-源擊穿電壓:
133 V
操作頻率:
1.8 MHz to 250 MHz
增益:
21.1 dB
輸出功率:
100 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
安裝風格:
Through Hole
封裝/外殼:
TO-220-3
封裝:
Tube
品牌:
NXP Semiconductors
互導 - 最小值:
7.1 S
通道數:
1 Channel
Pd - 功率消耗 :
182 W
產品類型:
RF MOSFET Transistors
系列:
MRF101
原廠包裝數量:
50
子類別:
MOSFETs
類型:
RF Power MOSFET
Vgs - 閘極-源極電壓:
- 6 V, + 10 V
Vgs th - 門源門限電壓 :
1.7 V
零件號別名:
935377234129
每件重量:
60 mg
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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