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MRFX600HR5

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V

Manufacturer:
NXP Semiconductors
Package:
Packing:
Reel, Cut Tape
Datasheet:
MRFX600HR5
Delivery services:
Payment method:
In stock:
19
Order quantity:

Specifications

Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
32 A
Vds - Drain-Source Breakdown Voltage:
193 V
Operating Frequency:
1.8 MHz to 400 MHz
Gain:
26.4 dB
Output Power:
600 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
Screw Mount
Package / Case:
NI-780H-4L
Packaging:
Reel
Packaging:
Cut Tape
Brand:
NXP Semiconductors
Number of Channels:
2 Channel
Pd - Power Dissipation:
1.333 kW
Product Type:
RF MOSFET Transistors
Series:
MRFX600
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Type:
RF Power MOSFET
Vgs - Gate-Source Voltage:
- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Part # Aliases:
935376369178
Unit Weight:
0.200697 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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