- Manufacturer:
- NXP
- Product Category:
- RF MOSFET Transistors
- Transistor Polarity:
- N-Channel
- Technology:
- Si
- Id - Continuous Drain Current:
- 32 A
- Vds - Drain-Source Breakdown Voltage:
- 193 V
- Operating Frequency:
- 1.8 MHz to 400 MHz
- Gain:
- 26.4 dB
- Output Power:
- 600 W
- Minimum Operating Temperature:
- - 40 C
- Maximum Operating Temperature:
- + 150 C
- Mounting Style:
- SMD/SMT
- Package / Case:
- NI-780S-4L
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Brand:
- NXP Semiconductors
- Number of Channels:
- 2 Channel
- Pd - Power Dissipation:
- 1.333 kW
- Product Type:
- RF MOSFET Transistors
- Series:
- MRFX600
- Factory Pack Quantity:
- 50
- Subcategory:
- MOSFETs
- Type:
- RF Power MOSFET
- Vgs - Gate-Source Voltage:
- - 6 V, 10 V
- Vgs th - Gate-Source Threshold Voltage:
- 2.1 V
- Part # Aliases:
- 935376371178
- Unit Weight:
- 0.026201 oz
