NE662M04-T2-A

Manufacturer:

CEL

Product Category:

RF Bipolar Transistors

Transistor Type:

Bipolar

Technology:

Si

Transistor Polarity:

NPN

Operating Frequency:

2 GHz

Collector- Emitter Voltage VCEO Max:

3.3 V

Emitter- Base Voltage VEBO:

1.5 V

Continuous Collector Current:

35 mA

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Configuration:

Single

Mounting Style:

SMD/SMT

Package / Case:

MiniMold-Flat-4

Packaging:

Reel

Brand:

CEL

DC Current Gain hFE Max:

100

Gain Bandwidth Product fT:

25 GHz

Height:

0.59 mm

Length:

2 mm

Pd - Power Dissipation:

115 W

Product Type:

RF Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Type:

RF Bipolar Small Signal

Width:

1.25 mm

Part # Aliases:

2SC5508-T2-A