- Manufacturer:
- Qorvo
- Product Category:
- RF MOSFET Transistors
- Transistor Polarity:
- Dual N-Channel
- Technology:
- GaN-on-SiC
- Id - Continuous Drain Current:
- 28 A
- Vds - Drain-Source Breakdown Voltage:
- 65 V
- Operating Frequency:
- 1 GHz to 1.1 GHz
- Gain:
- 22.5 dB
- Output Power:
- 1.862 kW
- Minimum Operating Temperature:
- - 40 C
- Maximum Operating Temperature:
- + 85 C
- Package / Case:
- NI-1230-4
- Packaging:
- Tray
- Brand:
- Qorvo
- Moisture Sensitive:
- Yes
- Number of Channels:
- 2 Channel
- Pd - Power Dissipation:
- 685 W
- Product Type:
- RF MOSFET Transistors
- Series:
- QPD1025
- Factory Pack Quantity:
- 18
- Subcategory:
- MOSFETs
- Type:
- RF Power MOSFET
- Vgs - Gate-Source Voltage:
- - 2.8 V
