- Manufacturer:
- Advanced Semiconductor, Inc.
- Product Category:
- RF Bipolar Transistors
- Transistor Type:
- Bipolar Power
- Technology:
- Si
- Transistor Polarity:
- NPN
- Operating Frequency:
- 175 MHz
- DC Collector/Base Gain hfe Min:
- 10
- Collector- Emitter Voltage VCEO Max:
- 18 V
- Emitter- Base Voltage VEBO:
- 4 V
- Continuous Collector Current:
- 20 A
- Minimum Operating Temperature:
- - 65 C
- Maximum Operating Temperature:
- + 200 C
- Mounting Style:
- Screw Mount
- Package / Case:
- M111
- Packaging:
- Tray
- Brand:
- Advanced Semiconductor, Inc.
- Pd - Power Dissipation:
- 270 W
- Product Type:
- RF Bipolar Transistors
- Factory Pack Quantity:
- 1
- Subcategory:
- Transistors
- Type:
- RF Bipolar Power
