TGF2929-FL

Manufacturer:

Qorvo

Product Category:

RF MOSFET Transistors

Transistor Polarity:

N-Channel

Technology:

GaN-on-SiC

Id - Continuous Drain Current:

12 A

Vds - Drain-Source Breakdown Voltage:

28 V

Operating Frequency:

3.5 GHz

Gain:

14 dB

Output Power:

107 W

Package / Case:

NI-360

Packaging:

Tray

Brand:

Qorvo

Moisture Sensitive:

Yes

Pd - Power Dissipation:

144 W

Product Type:

RF MOSFET Transistors

Series:

TGF2929

Factory Pack Quantity:

25

Subcategory:

MOSFETs

Type:

RF Power MOSFET

Vgs - Gate-Source Voltage:

145 V

Vgs th - Gate-Source Threshold Voltage:

- 2.9 V

Part # Aliases:

TGF2929 1123811

Unit Weight:

2.264236 oz