- Manufacturer:
- Advanced Semiconductor, Inc.
- Product Category:
- RF Bipolar Transistors
- Transistor Type:
- Bipolar Power
- Technology:
- Si
- Transistor Polarity:
- NPN
- Operating Frequency:
- 860 MHz
- DC Collector/Base Gain hfe Min:
- 15
- Collector- Emitter Voltage VCEO Max:
- 24 V
- Emitter- Base Voltage VEBO:
- 3.5 V
- Continuous Collector Current:
- 0.7 A
- Minimum Operating Temperature:
- - 50 C
- Maximum Operating Temperature:
- + 200 C
- Mounting Style:
- Through Hole
- Package / Case:
- 244-04
- Packaging:
- Tray
- Brand:
- Advanced Semiconductor, Inc.
- Pd - Power Dissipation:
- 8.75 W
- Product Type:
- RF Bipolar Transistors
- Subcategory:
- Transistors
- Type:
- RF Bipolar Power
