The IPW90R120C3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed and manufactured by Infineon Technologies. It is specifically designed for high-power applications and operates as a switching device in various power electronic circuits.
Here are the key features and specifications of the IPW90R120C3:
1. Power Rating: The IPW90R120C3 is rated for a maximum power dissipation of 860 watts, making it suitable for high-power applications.
2. Voltage Rating: It has a drain-source voltage (VDS) rating of 120 volts, indicating the maximum voltage it can withstand in normal operation.
3. Current Rating: The MOSFET has a continuous drain current (ID) rating of 90 amperes, indicating the maximum current it can handle under normal operating conditions.
4. Low On-Resistance: The IPW90R120C3 features a low on-resistance (RDS(on)) value, which results in reduced power losses and improved efficiency in power conversion applications.
5. Fast Switching Speed: It has a low gate charge (Qg) and a low input capacitance (Ciss), enabling fast switching characteristics and reducing switching losses.
6. Package Type: The "C3" suffix in the part number refers to the package type, which is a TO-247 package. This package offers good thermal performance and high current-carrying capabilities.
The IPW90R120C3 is commonly used in high-power applications, such as power supplies, motor control, inverters, and other power electronic circuits. Its high voltage and current ratings, along with its low on-resistance and fast switching speed, make it suitable for demanding applications that require efficient power switching and high power handling capabilities.
For detailed electrical characteristics, pinout information, and other technical specifications, it is recommended to refer to the datasheet provided by Infineon Technologies for the IPW90R120C3 power MOSFET. The datasheet will provide comprehensive information to help you understand and utilize the MOSFET effectively in your specific application.
