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IRF6712STRPBF

MOSFET 25V SINGLE N-CH 20V VGS HEXFET

Manufacturer:
Infineon Technologies
Package:
DirectFET-SQ
Packing:
Reel
Datasheet:
IRF6712STRPBF
Delivery services:
Payment method:
In stock:
2065
Order quantity:

Specifications

Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DirectFET-SQ
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
17 A
Rds On - Drain-Source Resistance:
6.7 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
1.9 V
Qg - Gate Charge:
12 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.2 W
Channel Mode:
Enhancement
Tradename:
DirectFET
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Infineon Technologies
Configuration:
Single
Fall Time:
12 ns
Forward Transconductance - Min:
40 S
Height:
0.7 mm
Length:
4.85 mm
Product Type:
MOSFET
Rise Time:
40 ns
Factory Pack Quantity:
4800
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
14 ns
Typical Turn-On Delay Time:
11 ns
Width:
3.95 mm
Part # Aliases:
IRF6712STRPBF SP001529206
Unit Weight:
0.017637 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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