SI4814BDY-T1-E3

MOSFET 2N-CH 30V 10A 8SOIC

Manufacturer：: Vishay Siliconix

Package：: 8-SOIC (0.154", 3.90mm Width)

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Datasheet：: SI4814BDY-T1-E3

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In stock：: 123552

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Specifications

Part Number: SI4814BDY-T1-E3

Manufacturer: Vishay Siliconix

Description: MOSFET 2N-CH 30V 10A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

FET Feature: Logic Level Gate

Drain to Source Voltage (Vdss): 30V

Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A

Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V

Vgs(th) (Max) @ Id: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds: -

Power - Max: 3.3W, 3.5W

Operating Temperature: -55°C ~ 150°C (TJ)

Mounting Type: Surface Mount

Package / Case: 8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

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