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SQ2389ES-T1_GE3 original picture
SQ2389ES-T1_GE3 medium  picture
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*Images are for reference only.

SQ2389ES-T1_GE3

MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified

Manufacturer:
Vishay / Siliconix
Package:
SOT-23-3
Packing:
Reel
Datasheet:
SQ2389ES-T1_GE3
Delivery services:
Payment method:
In stock:
1887
Order quantity:

Specifications

Manufacturer:
Vishay
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Transistor Polarity:
P-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
4.1 A
Rds On - Drain-Source Resistance:
94 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Qg - Gate Charge:
8.2 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
3 W
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
TrenchFET
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Vishay / Siliconix
Configuration:
Single
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
12 ns
Series:
SQ
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Transistor Type:
1 P-Channel
Typical Turn-Off Delay Time:
16 ns
Typical Turn-On Delay Time:
7 ns
Part # Aliases:
SQ2389ES-T1_BE3
Unit Weight:
0.000282 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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